mp02 xxx 190 series 1/10 symbol parameter max. units 160 a a conditions a t case = 75 o c t heatsink = 75 o c t heatsink = 85 o c t case = 85 o c t case = 75 o c i t(rms) rms value a 300 mean on-state current halfwave, resistive load i t(av) code circuit hbt hbp hbn repetitive peak voltages v drm v rrm type number 1400 1200 1000 lower voltage grades available. for full description of part number see "ordering instructions" on page 3. 123 module type code: mp02. see package details for further information mp02/190-14 mp02/190-12 mp02/190/10 t vj = 125 o c i drm = i rrm = 30ma v dsm & v rsm = v drm & v rrm + 100v respectively 150 190 125 a features n dual device module n electrically isolated package n pressure contact construction n international standard footprint n alumina (non-toxic) isolation medium applications n motor control n controlled rectifier bridges n heater control n ac phase control voltage ratings current ratings - per arm package outline circuit options key parameters v drm 1400v i tsm 6800a i t(av) (per arm) 190a v isol 2500v conditions mp02 xxx 190 series phase control dual scr, scr/diode modules replaces december 1998 version, ds4479-3.0 ds4479-4.0 january 2000
mp02 xxx 190 series 2/10 symbol parameter conditions max. units v r = 0 v r = 50% v rrm v r = 0 v r = 50% v rrm a 2 s i 2 t for fusing surge (non-repetitive) on-state current i tsm i 2 t 6800 a a 5500 231000 150000 a 2 s symbol parameter linear rate of rise of off-state voltage v ma v/ m s on-state voltage v tm i rrm /i drm peak reverse and off-state current to 60% v drm t j = 125 o c at v rrm /v drm , t j = 125 o c at 1000a, t case = 25 o c - see note 1 symbol parameter conditions o c/w units o c/w o c/w r th(c-hs) r th(j-c) virtual junction temperature t vj o c o c t sto storage temperature range mounting torque = 6nm with mounting compound 3 phase halfwave dc commoned terminals to base plate ac rms, 1min, 50hz max. rate of rise of on-state current v t(to) threshold voltage v from 67% v drm to 400a repetitive 50hz gate source 20v, 20 w rise time 0.5 m s, t j =125 o c m w at t vj = 125 o c - see note 1 at t vj = 125 o c - see note 1 r t on-state slope resistance * higher dv/dt values available, contact factory for particular requirements. note 1: the data given in this datasheet with regard to forward voltage drop is for calculation of the power dissipation in the semiconductor elements only. forward voltage drops measured at the power terminals of the module will be in excess of these figures due to the impedance of the busbar from the terminal to the semiconductor. di/dt dv/dt thermal resistance - case to heatsink per thyristor or diode o c/w isolation voltage v isol kv thermal resistance - junction to case per thyristor or diode -40 to 125 0.17 0.18 0.19 0.07 125 2.5 1.75 30 200* a/ m s 100 1.05 0.80 units max. conditions 10ms half sine; t j = 125 o c 10ms half sine; t j = 125 o c surge ratings - per arm thermal & mechanical ratings dynamic characteristics
mp02 xxx 190 series 3/10 symbol parameter conditions gate non-trigger voltage v units max. 3.0 0.2 typ. ma v v gd gate trigger voltage 200 v gt i gt gate trigger current v drm = 5v, t case = 25 o c v drm = 5v, t case = 25 o c, r l = 6 w v drm = 5v, t case = 25 o c, r l = 6 w - - - v rgm peak reverse gate voltage v 5.0 - a -4 i fgm peak forward gate current anode positive with respect to cathode p gm p g(av) peak gate power mean gate power - - 16 3 w w part number is made up as follows: mp02 hbt 190 - 16 mp = pressure contact module 02 = outline type hbt = circuit configuration code (see "circuit options" - front page) 175 = nominal average current rating at t case = 75 o c 16 = v rrm /100 note: diode ratings and characteristics are comparable with scr in types hbp or hbn. types hbp or hbn can also be supplied with diode polarity reversed, to special order. examples: mp02 hbp190-14 mp02 hbn190-12 adequate heatsinking is required to maintain the base temperature at 75 o c if full rated current is to be achieved. power dissipation may be calculated by use of v t(to) and r t information in accordance with standard formulae. we can provide assistance with calculations or choice of heatsink if required. the heatsink surface must be smooth and flat; a surface finish of n6 (32 m in) and a flatness within 0.05mm (0.002") are recommended. immediately prior to mounting, the heatsink surface should be lightly scrubbed with fine emery, scotch brite or a mild chemical etchant and then cleaned with a solvent to remove oxide build up and foreign material. care should be taken to ensure no foreign particles remain. an even coating of thermal compound (eg. unial) should be applied to both the heatsink and module mounting surfaces. this should ideally be 0.05mm (0.002") per surface to ensure optimum thermal performance. after application of thermal compound, place the module squarely over the mounting holes, (or 't' slots) in the heatsink. using a torque wrench, slowly tighten the recommended fixing bolts at each end, rotating each in turn no more than 1/4 of a revolution at a time. continue until the required torque of 6nm (55lb.ins) is reached at both ends. it is not acceptable to fully tighten one fixing bolt before starting to tighten the others. such action may damage the module. gate trigger characteristics and ratings ordering instructions mounting recommendations
mp02 xxx 190 series 4/10 100 10 1.0 0.1 0.001 0.01 0.1 1.0 10 gate trigger current i gt - (a) gate trigger voltage v gt - (v) t j = 125?c t j = 25?c t j = -40?c upper limit 99% lower limit 1% v fgm v gd i fgm 5w 10w 50w 75w 100w pulse width ? 20 25 100 500 1ms 10ms 50 100 100 100 100 100 10 100 100 100 100 100 50 - 400 100 100 100 25 - - pulse frequency hz table gives pulse power p gm in watts 0 1.0 2.0 3.0 4.0 instantaneous on-state voltage v t - (v) 2500 2000 1500 1000 500 0 instantaneous on-state current i t - (a) t j = 125?c curves fig. 1 maximum (limit) on-state characteristics (thyristor or diode) - see note 1 fig. 2 gate trigger characteristics
mp02 xxx 190 series 5/10 1 10 1 2 3 4 5 50 0 5 10 15 duration 60 100 140 peak half sine wave on-state current - (ka) ms cycles at 50hz i 2 t value - a 2 s x 10 3 180 i 2 t 20 10 20 30 0.001 0.010 0.100 1.0 10 100 time - (s) 0 0.1 0.2 0.3 thermal impedance - (?c/w) r th(j-hs) r th(j-c) fig. 3 transient thermal impedance (dc) - (thyristor or diode) fig. 4 surge (non-repetitive) on-state current vs time (with 50% v rrm , t case = 125?c (thyristor or diode)
mp02 xxx 190 series 6/10 0 50 100 150 200 250 mean on-state current i t(av) - (a) 300 250 200 150 100 50 0 on-state power loss per device - (w) 180? 120? 90? 60? 30? 0 50 100 150 200 250 300 mean on-state current i t(av) - (a) 400 350 300 250 200 150 100 50 0 on-state power loss per device - (w) 180? 120? 90? 60? 30? d.c. fig. 5 on-state power loss per arm vs forward current at various conduction angles, sine wave, 50/60hz fig. 6 on-state power loss per arm vs forward current at various conduction angles, square wave, 50/60hz
mp02 xxx 190 series 7/10 0 50 100 150 200 250 mean on-state curren i t(av) - (a) 120 100 80 60 40 20 0 maximum permissible case temperature - (?c) 180? 120? 90? 60? 30? 140 0 50 100 150 200 250 300 mean on-state current i t(av) - (a) 120 100 80 60 40 20 0 maximum permissible case temperature - (?c) 180? 120? 90? 60? 30? 140 d.c. fig. 7 maximum permissible case temperature vs forward current per arm at various conduction angles, sine wave, 50/60hz fig. 8 maximum permissible case temperature vs forward current per arm at various conduction angles, square wave, 50/60hz
mp02 xxx 190 series 8/10 0 40 80 120 0 200 400 1200 1000 800 600 400 200 0 total power - (w) 100 60 20 maximum ambient temperature - (?c) d.c. output current - (a) r th(hs-a) ?c/w 0.02 0.04 0.08 0.10 0.12 0.15 0.20 0.40 0.30 140 r - load l - load 0 40 80 120 0 200 400 1200 1000 800 600 400 200 0 total power - (w) 100 60 20 maximum ambient temperature - (?c) d.c. output current - (a) r & l- load r th(hs-a) ?c/w 0.02 0.04 0.08 0.10 0.12 0.15 0.20 0.30 0.40 140 fig. 9 50/60hz single phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance. (note: r th(hs-a) values given above are true heatsink thermal resistances to ambient and already account for r th(c-hs) module contact thermal). fig. 9 50/60hz 3- phase bridge dc output current vs power loss and maximum permissible ambient temperature for various values of heatsink thermal resistance. (note: r th(hs-a) values given above are true heatsink thermal resistances to ambient and already account for r th(c-hs) module contact thermal).
mp02 xxx 190 series 9/10 23 23 24 13 80 34 30 94 3x m6 12.8 2 holes 6.5 123 24 5 15 k 2 g 2 k 1 g 1 nominal weight: 350g recommended fixings for mounting: m6 socket head cap screws recommended mounting torque: 6nm (55lb.ins) recommended torque for electrical connections: 5nm (44lb.ins) maximum torque for electrical connections: 8nm (70lb.ins) module outline type code: mp02 hbt g 1 k 1 1 2 hbp 1 2 hbn k 2 g 2 1 2 3 3 3 g 1 k 1 k 2 g 2 package details for further package information, please contact your local customer service centre. all dimensions in mm, unless stated otherwi se. do not scale. circuit configurations
mp02 xxx 190 series 10/10 customer service centres france, benelux, italy and spain tel: +33 (0)1 69 18 90 00. fax: +33 (0)1 64 46 54 50 north america tel: 011-800-5554-5554. fax: 011-800-5444-5444 uk, germany, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 sales offices france, benelux, italy and spain tel: +33 (0)1 69 18 90 00. fax: +33 (0)1 64 46 54 50 germany tel: 07351 827723 north america tel: (613) 723-7035. fax: (613) 723-1518. toll free: 1.888.33.dynex (39639) / tel: (831) 440-1988. fax: (831) 440-1989 / tel: (949) 733-3005. fax: (949) 733-2986. uk, germany, scandinavia & rest of world tel: +44 (0)1522 500500. fax: +44 (0)1522 500020 these offices are supported by representatives and distributors in many countries world-wide. ? dynex semiconductor 2000 publication no. ds4479-4 issue no. 4.0 january 2000 technical documentation C not for resale. printed in united kingdom headquarters operations dynex semiconductor ltd doddington road, lincoln. lincolnshire. ln6 3lf. united kingdom. tel: 00-44-(0)1522-500500 fax: 00-44-(0)1522-500550 dynex power inc. unit 7 - 58 antares drive, nepean, ontario, canada k2e 7w6. tel: 613.723.7035 fax: 613.723.1518 toll free: 1.888.33.dynex (39639) this publication is issued to provide information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. no warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. the company reserves the right to alter without prior notice the specification, design or price of any product or service. information concerning p ossible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. it is the user's responsibility to fully determine the p erformance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. these products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. all products and materials are sold and services provided subject to the company's conditions of sale, w hich are available on request. all brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respec tive owners. http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com datasheet annotations: dynex semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. the annota tions are as follows:- target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product is in design and development. the datasheet represents the product as it is understood but details may change. advance information: the product design is complete and final characterisation for volume production is well in hand. no annotation: the product parameters are fixed and the product is available to datasheet specification. associated publications title application note number calculating the junction temperature or power semiconductors an4506 recommendations for clamping power semiconductors an4839 thyristor and diode measurement with a multi-meter an4853 use of v to , r t on-state characteristic an5001 power assembly capability the power assembly group was set up to provide a support service for those customers requiring more than the basic semiconduc- tor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage an d current capability of our semiconductors. we offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today . the assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing need s of our customers. using the up to date cad methods our team of design and applications engineers aim to provide the power assembly complete solution (pacs). heatsinks power assembly has its own proprietary range of extruded aluminium heatsinks. they have been designed to optimise the performance or our semiconductors. data with respect to air natural, forced air and liquid cooling (with flow rates) is availa ble on request. for further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or the factory.
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